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RTF020P02
Transistors
Electrical characteristics (Ta=25 ° C)
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
± 10
Unit
μ A
Conditions
V GS = ± 12V, V DS =0V
Drain-source breakdown voltage V (BR) DSS
? 20
?
?
V
I D = ? 1mA, V GS =0V
?
?
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
I DSS
V GS (th)
?
R DS (on)
Y fs ?
C iss
C oss
C rss
t d (on) ?
t r
t d (off) ?
t f
?
? 0.7
?
?
?
2.0
?
?
?
?
?
?
?
?
?
60
65
120
?
640
110
85
12
15
40
12
? 1
? 2.0
85
90
165
?
?
?
?
?
?
?
?
μ A
V
m ?
m ?
m ?
S
pF
pF
pF
ns
ns
ns
ns
V DS = ? 20V, V GS =0V
V DS = ? 10V, I D = ? 1mA
I D = ? 2A, V GS = ? 4.5V
I D = ? 2A, V GS = ? 4V
I D = ? 1A, V GS = ? 2.5V
V DS = ? 10V, I D = ? 1A
V DS = ? 10V
V GS =0V
f=1MHz
I D = ? 1A
V DD ? 15V
V GS = ? 4.5V
R L =15 ?
R G =10 ?
Total gate charge
Q g ?
?
7.0
?
nC
V DD
? 15V
R L =7.5 ?
Gate-source charge
Gate-drain charge
Q gs ?
Q gd ?
?
?
1.6
2.0
?
?
nC
nC
V GS = ? 4.5V
I D = ? 2A
R G =10 ?
? Pulsed
Body diode characteristics (Source-drain) (Ta=25 ° C)
Parameter
Forward voltage
Symbol
V SD
Min.
?
Typ.
?
Max.
? 1.2
Unit
V
Conditions
I S = ? 0.6A, V GS =0V
Rev.C
2/4
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